Universal Memory breakthough: Patented device uses 100 times less energy than DRAM

guest · Jun 21, 2019

Universal Memory breakthough: Patented device uses 100 times less energy than DRAM
The world of flash drives and DRAM could soon be a distant memory
June 20, 2019
https://techerati.com/news-hub/univ...-device-uses-100-times-less-energy-than-dram/

Researchers at the University of Lancaster have created the world’s first Universal Memory device, which could spell the end of the $100bn market for Dynamic Random Access Memory (DRAM).
The quest for the first Universal Memory device has preoccupied scientists and engineers for decades and was widely considered impossible.

Computers presently store working memory, a type of data that is constantly changing, on DRAM. While DRAM enables fast and low-energy writing of working memory, it constantly refreshes this volatile data to preserve it, making it inefficient.
Flash storage, on the other hand, is used for long-term data storage. Writing to flash drives is slow, energy intensive and slowly deteriorates them, making them unsuitable for working memory.

The idea behind Universal Memory is to combine the advantages of both without their drawbacks, and researchers claim to have created a device that fits the bill.
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“Our device has an intrinsic data storage time that is predicted to exceed the age of the Universe, yet it can record or delete data using 100 times less energy than DRAM,” said Manus Hayne, Physics Professor at Lancaster University.
As the device is still a PoC at this stage, it will be a long time before it makes its way into data centres, but it’s an impressive achievement nonetheless.
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guest · Jan 20, 2020

'Universal memory' research passes new milestone
January 20, 2020
https://techxplore.com/news/2020-01-universal-memory-milestone.html

Physicists at Lancaster University have demonstrated that their invention of a new type of memory device could transform the way computers, smartphones and other gadgets work.

The article, published in the January edition of the journal IEEE Transactions on Electron Devices, shows how individual memory cells can be connected together in arrays to make a RAM. It predicts that such chips would at least match the speed performance of DRAM, but do so 100 times more efficiently, and with the additional advantage of non-volatility.

Professor Manus Hayne, who is leading the research, said: "The work published in this new paper represents a significant advance, providing a clear blueprint for the implementation of ULTRARAM memory."
This new non-volatile RAM, called ULTRARAM, would be a working implementation of so-called 'universal memory', combining all the advantages of DRAM and flash, with none of the drawbacks.
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